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BYV52HR

ST Microelectronics
Part Number BYV52HR
Manufacturer ST Microelectronics
Description Aerospace 30 A - 200 V fast recovery rectifier
Published Jun 30, 2010
Detailed Description www.DataSheet4U.com BYV52HR Aerospace 30 A - 200 V fast recovery rectifier Features ■ ■ ■ ■ ■ ■ Very small conduction ...
Datasheet PDF File BYV52HR PDF File

BYV52HR
BYV52HR

Overview
www.
DataSheet4U.
com BYV52HR Aerospace 30 A - 200 V fast recovery rectifier Features ■ ■ ■ ■ ■ ■ Very small conduction losses Negligible switching losses High surge current capability High avalanche energy capability Hermetic package Target radiation qualification: – 150 krad (Si) low dose rate – 3 Mrad high dose rate Package mass: 10 g ESCC qualified Figure 1.
Device configuration TO-254 ■ ■ Description Packaged in an hermetic TO-254 this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other aerospace applications.
The complete ESCC specification for this device is available from the European space agency web site.
ST guarantees full compliance of qualified parts with such ESCC detailed specifications.
Table 1.
Device summary(1) ESCC detailed Quality level specification 5103/030/01 Engineering model Flight part Terminal 1: Cathode 3 Terminal 2: No connection Terminal 3: Anode The case is not connected to any lead BYV52-200FSY1 BYV52-200FSYHRB 1 Order code BYV52-200FSY1 BYV52-200FSYHRB Lead finish Gold Solder dip EPPL - IF(AV) VRRM Tj(max) VF (max) 30 A Y 200 V 150 °C 1.
15 V 1.
Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
April 2010 Doc ID 17395 Rev 1 1/8 www.
st.
com 8 www.
DataSheet4U.
com Characteristics BYV52HR 1 Characteristics Table 2.
Symbol Absolute maximum ratings Characteristic Forward surge current (per diode)(1) Repetitive peak reverse voltage (2) (3) Value 400 200 30 30 Unit A V A A °C °C °C °C IFSM VRRM IO IF(RMS) TOP TJ TSTG TSOL Average output rectified current (50% duty cycle): Forward rms current (per diode) Operating case temperature range Junction temperature Storage temperature range(4) (4) -55 to +150 +150 -55 to +150 +260 Soldering temperature(5) 1.
Sinusoidal pulse of 10 ms duration 2.
Pulsed, duration 5 ms, F = 50 Hz 3.
For Tcase ≥ +120°C, derate linearly to 0 ...


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