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BUK7608-55

NXP
Part Number BUK7608-55
Manufacturer NXP
Description TrenchMOS transistor Standard level FET
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel en...
Datasheet PDF File BUK7608-55 PDF File

BUK7608-55
BUK7608-55

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting.
Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
It is intended for use in automotive and general purpose switching applications.
BUK7608-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
55 75 187 175 8 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN.
- 55 MAX.
55 55 16 75 65 240 187 175 UNIT V V V A A A W ˚C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.
5 kΩ) MIN.
MAX.
2 UNIT kV THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS Minimum footprint, FR4 board TYP.
50 MAX.
0.
8 UNIT K/W K/W April 1998 1 Rev 1.
000 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS ±V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate-source ...


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