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BUK7608-55A

nexperia
Part Number BUK7608-55A
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description BUK7608-55A N-channel TrenchMOS standard level FET Rev. 03 — 14 June 2010 Product data sheet 1. Product profile 1.1 G...
Datasheet PDF File BUK7608-55A PDF File

BUK7608-55A
BUK7608-55A

Overview
BUK7608-55A N-channel TrenchMOS standard level FET Rev.
03 — 14 June 2010 Product data sheet 1.
Product profile 1.
1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.
2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V and 24 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 11; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 Min Typ Max Unit - - 55 V [1] - - 75 A - - 254 W - - 16 mΩ - 6.
8 8 mΩ Nexperia BUK7608-55A N-channel TrenchMOS standard level FET Table 1.
Quick reference data …continued Symbol Parameter Conditions Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped QGD gate-drain charge VGS = 0 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13 [1] Continuous current is limited by package.
2.
Pinning information Min Typ Max Unit - - 670 mJ - 35 - nC Table 2.
Pin 1 2 3 mb Pinning information Symbol Description Simplified outline G gate D drain[1] mb S source D mounting base; connected to drain 2 13 SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2.
3.
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