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GPT13N50C

Greatpower
Part Number GPT13N50C
Manufacturer Greatpower
Description POWER FIELD EFFECT TRANSISTOR
Published Nov 8, 2017
Detailed Description GPT13N50C / GPT13N50CD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an ad...
Datasheet PDF File GPT13N50C PDF File

GPT13N50C
GPT13N50C

Overview
GPT13N50C / GPT13N50CD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time.
In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes.
The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time.
Designed f...


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