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GPT13N50CD

Greatpower
Part Number GPT13N50CD
Manufacturer Greatpower
Description POWER FIELD EFFECT TRANSISTOR
Published Nov 8, 2017
Detailed Description GPT13N50C / GPT13N50CD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an ad...
Datasheet PDF File GPT13N50CD PDF File

GPT13N50CD
GPT13N50CD

Overview
GPT13N50C / GPT13N50CD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time.
In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes.
The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time.
Designed for high voltage, high speed Ciss improvement switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin ag...


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