DatasheetsPDF.com

BUZ332A

Siemens Semiconductor Group
Part Number BUZ332A
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 332 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated www.DataSheet4U.com Pin 1 G Pin...
Datasheet PDF File BUZ332A PDF File

BUZ332A
BUZ332A

Overview
BUZ 332 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated www.
DataSheet4U.
com Pin 1 G Pin 2 D Pin 3 S Type BUZ 332 A VDS 600 V ID 8A RDS(on) 0.
9 Ω Package TO-218 AA Ordering Code C67078-S3123-A4 Maximum Ratings Parameter Continuous drain current Symbol Values 8 Unit A ID IDpuls 32 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 8 13 mJ ID = 8 A, VDD = 50 V, RGS = 25 Ω L = 16.
3 mH, Tj = 25 °C Gate source voltage Power dissipation 570 VGS Ptot ± 20 150 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 0.
83 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 332 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static www.
DataSheet4U.
com Characteristics Values typ.
max.
Unit Drain- source breakdown voltage V(BR)DSS 600 3 0.
1 10 10 0.
8 4 V VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.
1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.
9 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 5 A Semiconductor Group 2 07/96 BUZ 332 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics www.
DataSheet4U.
com Values typ.
max.
Unit Transconductance gfs 5 8.
5 1400 180 65 - S pF 2100 270 100 ns 20 30 VDS≥ 2 * ID * RDS(on)max, ID = 5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 M...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)