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BUZ330

Siemens Semiconductor Group
Part Number BUZ330
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 330 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet PDF File BUZ330 PDF File

BUZ330
BUZ330

Overview
BUZ 330 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 330 VDS 500 V ID 9.
5 A RDS(on) 0.
6 Ω Package TO-218 AA Ordering Code C67078-S3105-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 9.
5 Unit A ID IDpuls 38 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 9.
5 13 mJ ID = 9.
5 A, VDD = 50 V, RGS = 25 Ω L = 13.
4 mH, Tj = 25 °C Gate source voltage Power dissipation 670 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal ...


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