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BSP030

NXP
Part Number BSP030
Manufacturer NXP
Description N-Channel MOSFET
Published Mar 23, 2005
Detailed Description BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description ...
Datasheet PDF File BSP030 PDF File

BSP030
BSP030

Overview
BSP030 N-channel enhancement mode field-effect transistor Rev.
04 — 26 July 2000 Product specification 1.
Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability: BSP030 in SOT223.
2.
Features s TrenchMOS™ technology s Fast switching s Low on-state resistance s Logic level compatible s Surface mount package.
3.
Applications s Motor and actuator driver c c s Battery management s High speed, low resistance switch.
4.
Pinning information Table 1: Pinning - SOT223, simplified outline and symbol Pin Description Simplified outline 1 gate (g) 2 drain (d) 4 3 source (s) 4 drain (d) 03ab45 1 23 SOT223 Symbol d g 03ab30 s N-channel MOSFET 1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors BSP030 N-channel enhancement mode field-effect transistor 5.
Quick reference data Table 2: Quick reference data Symbol Parameter VDS ID Ptot Tj RDSon drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance 6.
Limiting values Conditions Tj = 25 to 150 °C Tsp = 25 °C; VGS = 4.
5 V Tsp = 25 °C VGS = 10 V; ID = 5 A VGS = 4.
5 V; ID = 2.
5 A Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tj = 25 to 150 °C Tj = 25 to 150 °C; RGS = 20 kΩ Tsp = 25 °C; VGS = 4.
5 V; Figure 2 and 3 IDM peak drain current Tsp = 100 °C; VGS = 4.
5 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Ptot total power dissipation Tstg storage temperature Tj operating junction temperature Source-drain diode Tsp = 25 °C; Figure 1 IS source (diode forward) current (DC) Tsp = 25 °C ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Typ Max Unit − 30 V − 10 A − 8.
3 W − 150 °C 20 30 mΩ 30 50 mΩ Min Max Unit − 30 V − 30 V − ±...


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