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BSP090

NXP
Part Number BSP090
Manufacturer NXP
Description P-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSP090 P-channel enhancement mode vertical D-MOS transistor Product specification Su...
Datasheet PDF File BSP090 PDF File

BSP090
BSP090

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSP090 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jan 20 File under Discrete Semiconductors, SC07 1997 Mar 13 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • High speed switching • No secondary breakdown • Very low on-state resistance.
APPLICATIONS • Motor and actuator drivers • Power management • Synchronized rectification.
handbook, halfpage BSP090 PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d gate drain source drain DESCRIPTION 4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package.
g CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static discharge during transport or handling.
s 1 Top view 2 3 MAM121 Fig.
1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = −1 mA; VDS = VGS Ts = 100 °C Ts = 100 °C IS = −1.
25 A CONDITIONS − − − −1 − − MIN.
MAX.
−30 −1.
3 ±20 −2.
8 −5.
7 0.
09 5 V V V V A Ω W UNIT ID = −2.
8 A; VGS = −10 V − 1997 Mar 13 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS VGS ID IDM Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation Ts = 100 °C; note 1 note 2 Ts = 100 °C Tamb = 25 °C; note 3 Tamb = 25 °C; note 4 Tstg Tj IS ISM Notes 1.
Ts is the temperature at the soldering point of the drain lead.
2.
Pulse width and duty cycle limited by maximum junction temperature.
3.
Device mounted on a printed-circuit board with a Rth a-tp (...


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