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BSS123LT1

Motorola Inc
Part Number BSS123LT1
Manufacturer Motorola Inc
Description TMOS FET Transistor
Published Mar 23, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TMOS FET Transistor N–Channel 3 DRAIN 1 GATE...
Datasheet PDF File BSS123LT1 PDF File

BSS123LT1
BSS123LT1

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TMOS FET Transistor N–Channel 3 DRAIN 1 GATE 2 SOURCE BSS123LT1 Motorola Preferred Device ® MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Symbol VDSS VGS VGSM ID IDM 3 1 2 Value 100 ± 20 ± 40 0.
17 0.
68 Unit Vdc Vdc Vpk Adc CASE 318 – 08, STYLE 21 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(3) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING BSS123LT1 = SA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 250 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 100 Vdc) TJ = 25°C TJ = 125°C Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS — — IGSS — — — — 15 60 50 nAdc 100 — — Vdc µAdc ON CHARACTERISTICS(4) Gate Threshold Voltage (VDS = VGS, ID = 1.
0 mAdc) Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 100 mAdc) 1.
2.
3.
4.
VGS(th) rDS(on) gfs 0.
8 — 80 — 5.
0 — 2.
8 6.
0 — Vdc Ω mmhos The Power Dissipation of the package may result in a lower continuous drain current.
Pulse Width 300 ms, Duty Cycle 2.
0%.
FR– 5 = 1.
0 0.
75 0.
062 in.
Pulse Test: Pulse Width 300 ms, Duty Cycle 2.
0%.
v   v v v Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
1997 1 BSS123LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.
0 MHz) Output Capacitance (VDS = ...


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