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BSS123LT1

ON Semiconductor
Part Number BSS123LT1
Manufacturer ON Semiconductor
Description Power MOSFET
Published Mar 23, 2005
Detailed Description BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available...
Datasheet PDF File BSS123LT1 PDF File

BSS123LT1
BSS123LT1

Overview
BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) VGS ± 20 Vdc VGSM ± 40 Vpk Drain Current − Continuous (Note 1) − Pulsed (Note 2) Adc ID 0.
17 IDM 0.
68 Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C PD 225 mW 1.
8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1.
The Power Dissipation of the package may result in a lower continuous drain current.
2.
Pulse Width v 300 ms, Duty Cycle v 2.
0%.
3.
FR−5 = 1.
0  0.
75  0.
062 in.
170 mAMPS 100 VOLTS RDS(on) = 6 W N−Channel 3 1 2 MARKING DIAGRAM 3 SOT−23 CASE 318 1 STYLE 21 2 SA SA = Device Code M = Date Code PIN ASSIGNMENT Drain 3 M 12 Gate Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: BSS123LT1/D BSS123LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 250 mAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 100 Vdc) TJ = 25°C TJ = 125°C Gate−Body Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (VDS = VGS, ID = 1.
0 m...


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