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BST70A

NXP
Part Number BST70A
Manufacturer NXP
Description N-channel transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BST70A N-channel vertical D-MOS transistor Product specification File under Discrete...
Datasheet PDF File BST70A PDF File

BST70A
BST70A

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BST70A N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.
FEATURES: • Very low RDS(on) • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No second breakdown PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 500 mA; VGS = 10 V Transfer admittance ID = 500 mA; VDS = 15 V  Yfs  typ.
RDS(on) VDS VGSO ID Ptot BST70A max.
max.
max.
max.
typ.
max.
80 V 20 V 0.
5 A 1 W 2 Ω 4 Ω 300 mS PIN CONFIGURATION handbook, halfpage d 1 2 3 g MAM146 s Note: Various pinout configurations available.
Fig.
1 Simplified outline and symbol.
April 1995 2 Philips Semiconductors Product specification N-channel vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note 1.
Transistor mounted on printed circuit board, max.
lead length 4 mm, mounting pad for drain lead min.
10 mm × 10 mm.
Rth j-a = VDS VGSO ID IDM Ptot Tstg Tj max.
max.
max.
max.
max.
max.
BST70A 80 V 20 V 0.
5 A 1.
0 A 1 W 150 °C − 65 to + 150 °C 125 K/W April 1995 3 Philips Semiconductors Product specification N-channel vertical D-MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown voltage ID = 10 µA; VGS = 0 Drain-source leakage current VDS = 60 V; VGS = 0 G...


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