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BST74A

NXP
Part Number BST74A
Manufacturer NXP
Description N-channel transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BST74A N-channel vertical D-MOS transistor Product specification File under Discrete...
Datasheet PDF File BST74A PDF File

BST74A
BST74A

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BST74A N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 250 mA; VGS = 10 V Transfer admittance ID = 250 mA; VDS = 15 V PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain  Yfs  typ.
RDS(on) VDS VGSO ID Ptot BST74A max.
max.
max.
max.
typ.
max.
200 V 20 V 250 mA 1 W 6 Ω 12 Ω 250 mS PIN CONFIGURATION handbook, halfpage d 1 2 3 g MAM146 s Note: Various pinout configurations available.
Fig.
1 Simplified outline and symbol.
April 1995 2 Philips Semiconductors Product specification N-channel vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note Rth j-a = VDS VGSO ID IDM Ptot Tstg Tj max.
max.
max.
max.
max.
max.
BST74A 200 V 20 V 250 mA 800 mA 1 W 150 °C −65 to +150 °C 125 K/W 1.
Transistor mounted on printed circuit board, max.
lead length 4 mm, mounting pad for collector lead min.
10 mm × 10 mm.
April 1995 3 Philips Semiconductors Product specification N-channel vertical D-MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown voltage ID = 10 µA; VGS...


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