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AQV414E

Panasonic
Part Number AQV414E
Manufacturer Panasonic
Description Photo MOS Relay
Published Feb 9, 2018
Detailed Description GU-E PhotoMOS (AQV414E, AQV41❍EH)VDE (AQV412EH) (Standard type) TESTING VDE (AQV410EH, 414EH) (AQV410EH, 414EH) (Rein...
Datasheet PDF File AQV414E PDF File

AQV414E
AQV414E


Overview
GU-E PhotoMOS (AQV414E, AQV41❍EH)VDE (AQV412EH) (Standard type) TESTING VDE (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) General use and economy type.
DIP (1 Form B) 6-pin type.
Reinforced insulation 5,000V type.
GU-E PhotoMOS (AQV414E, AQV41❍EH) ;;;; 8.
8 .
346 6.
4 .
252 3.
9 .
154 8.
8 .
346 1 2 3 6.
4 .
252 3.
6 .
142 mm inch 6 5 4 2.
This is the low-cost version PhotoMOS 1 Form B output type relay.
Compared to the previous GU PhotoMOS 1 Form B type relay, the attainment of an economical price that is approximately 22% lower will further broaden its market.
3.
Normally closed type (2 Form B) is low on-resistance.
(All AQ❍4 PhotoMOS are Form B types.
And also the Form A types have a low on-resistance.
) This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.
Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insula...


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