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AQV414EH

Panasonic
Part Number AQV414EH
Manufacturer Panasonic
Description Photo MOS Relay
Published Feb 9, 2018
Detailed Description Normally closed type with reinforced insulation (AQV410EH, 414EH) (AQV412EH) GE 1 Form B (AQV41❍EH) 8.8 .346 6.4 .252...
Datasheet PDF File AQV414EH PDF File

AQV414EH
AQV414EH

Overview
Normally closed type with reinforced insulation (AQV410EH, 414EH) (AQV412EH) GE 1 Form B (AQV41❍EH) 8.
8 .
346 6.
4 .
252 8.
8 .
346 3.
9 .
154 6.
4 .
252 3.
6 .
142 (Height includes standoff) mm inch 16 25 34 RoHS compliant FEATURES 1.
1 Form B output type 2.
60V type couples high capacity (0.
55A) with low on-resistance (Typ.
1Ω).
3.
Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.
Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N– N+ Drain electrode 4.
Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion.
5.
High sensitivity and low onresistance Can control max.
0.
55 A load current with 5 mA input current.
Low on-resistance of...


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