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BFR93A

Part Number	BFR93A
Manufacturer	NXP
Description	NPN 6 GHz wideband transistor
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of Septe...
Datasheet	BFR93A PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors NPN 6 GHz wideband transistor Product specification BFR93A FEATURES  High power gain  Low noise figure  Very low intermodulation distortion.
DESCRIPTION NPN wideband transistor in a plastic SOT23 package.
PNP complement: BFT93.
lfpage 3 APPLICATIONS  RF wideband amplifiers and oscillators.
PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Top view 2 MSB003 Marking code: R2p.
Fig.
1 SOT23.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP.
VCBO VCEO IC Ptot Cre fT GUM F VO collector-base voltage open emitter  collector-emitter voltage open base  collector current (DC)  total power dissipation Ts  95 C  feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz 0.
6 transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 6 maximum unilateral power gain IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C 13 noise figure output voltage IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C 7 IC = 5 mA; VCE = 8 V; f = 1 GHz; s = opt; Tamb = 25 C 1.
9 dim = 60 dB; IC = 30 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C; fp + fq  fr = 793.
25 MHz 425 MAX.
UNIT 15 V 12 V 35 mA 300 mW  pF  GHz  dB  dB  dB  mV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature open emitter open base open collector Ts  95 C; note 1 Note 1.
Ts is the temperature at the soldering point of the collector pin.
MIN.
     65  MAX.
UNIT 15 V 12 V 2V 35 mA 300 mW +150 C +175 C 1997 Oct 29 2 NXP Semiconductors NPN 6 GHz wideband transistor Product specification BFR93A THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-s thermal ...

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