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BFR93A

Part Number	BFR93A
Manufacturer	Infineon Technologies AG
Description	Low Noise Silicon Bipolar RF Transistor
Published	Mar 23, 2005
Detailed Description	Low Noise Silicon Bipolar RF Transistor • For low-noise, high gain broadband amplifiers at collector currents from 2 mA ...
Datasheet	BFR93A PDF File

Overview

Low Noise Silicon Bipolar RF Transistor • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR93A ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR93A Marking Pin Configuration R2s 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 111 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 12 20 20 2 90 9 300 150 -55 .
.
.
150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 130 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-03 BFR93A Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min.
typ.
DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.
5 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V, pulse measured V(BR)CEO 12 - ICES -- ICBO -- IEBO -- hFE 70 100 max.
- 100 100 10 140 Unit V µA nA µA - 2 2014-04-03 BFR93A Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
AC Characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded fT 4.
5 6 - Ccb - 0.
54 0.
8 Unit GHz pF Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.
25 - E...

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