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BFR93R

Part Number	BFR93R
Manufacturer	Vishay Telefunken
Description	Silicon NPN Planar RF Transistor
Published	Mar 23, 2005
Detailed Description	BFR93/BFR93R Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for...
Datasheet	BFR93R PDF File

Overview

BFR93/BFR93R Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device.
Observe precautions for handling.
Applications RF amplifier up to GHz range specially for wide band antenna amplifier.
Features D High power gain D Low noise figure D High transition frequency 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BFR93 Marking: R1 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR93R Marking: R4 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 40 200 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.
5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 85034 Rev.
3, 20-Jan-99 www.
vishay.
de • FaxBack +1-408-970-5600 1 (7) BFR93/BFR93R Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions VCE = 20 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 30 mA Symbol Min ICES ICBO IEBO V(BR)CEO 12 hFE 25 Typ Max Unit 100 mA 100 nA 10 mA V 150 50 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain Test Conditions VCE = 5 V, IC = 30 mA, f = 500 MHz VCB = 5 V, f = 1 MHz VCE = 10 V, f = 1 MHz VEB = 0.
5 V, f = 1 MHz VCE = 5 V, IC = 4 mA, ZS = 50 W, f = 500 MHz V...

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