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BFR949

Part Number	BFR949
Manufacturer	Infineon Technologies AG
Description	NPN Silicon RF Transistor
Published	Mar 23, 2005
Detailed Description	BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector current...
Datasheet	BFR949 PDF File

Overview

BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz 3 1 2 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949F Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 93°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) Marking RKs Pin Configuration 1=B 2=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS 3=C Package TSFP-3 Unit V Value 10 20 20 1.
5 35 4 250 150 -65 .
.
.
150 -65 .
.
.
150 mA mW °C Value 225 Unit K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jan-04-2002 BFR949F Electrical Characteri...

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