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BGM1011

NXP
Part Number BGM1011
Manufacturer NXP
Description MMIC wideband amplifier
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGM1011 MMIC wideband amplifier Preliminary specification 20...
Datasheet PDF File BGM1011 PDF File

BGM1011
BGM1011

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGM1011 MMIC wideband amplifier Preliminary specification 2002 Jan 14 Philips Semiconductors Preliminary specification MMIC wideband amplifier FEATURES • Internally matched to 50 Ω • Very high gain (up to 37 dB at 2 Ghz) • Sloped gain curve for optimal performance with output into lossy cable • 14 dBm saturated output power at 1 GHz • High linearity (23 dBm IP3(out) at 1 GHz) • 40 dB isolation APPLICATIONS • LNB IF amplifiers • Cable systems • General purpose.
1 2 3 MAM455 BGM1011 PINNING PIN 1 2, 5 3 4 6 VS GND2 RF out GND1 RF in DESCRIPTION 6 5 4 1 6 3 4 2, 5 DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
Top view Marking code: C1-.
Fig.
1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA SYMBOL VS IS |s21|2 NF PL(sat) PARAMETER DC supply voltage DC supply current insertion power gain noise figure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz CONDITIONS 5 25.
5 30 4.
7 13.
8 TYP.
6 − − − − MAX.
V mA dB dB dBm UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL VS IS Ptot Tstg Tj PD PARAMETER DC supply voltage supply current total power dissipation storage temperature operating junction temperature maximum drive power CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Ts ≤ 90 °C CONDITIONS RF input AC coupled − − − −65 − − MIN.
6 35 200 +150 150 0 MAX.
UNIT V mA mW °C °C dBm 2002 Jan 14 2 Philips Semiconductors Preliminary specification MMIC wideband amplifier THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS BGM1011 VALUE 300 UNIT K/W thermal resistance from junction to solder point Ptot = 200 mW; Ts ≤ 90 °C CHARACTERISTICS VS = 5 V; IS ...


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