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RB521S-30 Datasheet PDF


Part Number RB521S-30
Manufacturer YS
Title Schottky Barrier Diode
Description DATA SHEET SEMICONDUCTOR 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode RB521S-30 H DEVICE MAR...
Features SOD-523 Flat Lead ƒ Low Forward Voltage Drop ƒ Flat Lead SOD-523 Small Outline Plastic Package ƒ Extremely Small SOD-523 Package ƒ Surface Device Type Mounting ƒ Moisture Sensitivity Level 1 ƒ Pb Free Version and RoHS Compliant ƒ Matte Tin(Sn) Lead Finish ƒ Band Indicates Cathode Cathode Anode ...

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RB521S-30 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB521S-30 Schottky barrier Diode FEATURE z Small surface mounting type z Low reverse current and low forward voltage z High reliability SOD-523 + - MARKING: C The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter DC reverse voltage Mean rectifying current Non-repetitive Peak forward surge current @ t=8.3ms Power dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Symbol VR IO IFSM PD RθJA Tj Tstg Limit 30 200 1 150 667 125 -55~.

RB521S-30 : Data Sheet Schottky Barrier Diode RB521S-30 Applications General rectification Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Land size figure (Unit : mm) 0.8 1.2±0.05d for 1.6±0.1 0.6 1.7 Features 1)Ultra small mold type.(EMD2) 2)Low VF 3)High reliability Construction Silicon epitaxial planar 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 0.6±0.1 φ1.5±0.05 φ1.55±0.05 EMD2 Structure 0.2±0.05 1.75±0.1 0.6 3.5±0.05 8.0±0.15 11..2256±0.0.0065 00 2.2.4405±±0.0.015NotNeRewcDoemsimgennsde 11..235±0.0066 0 00.9.905±±0.005.06 0 Emポptケy pッoトcket 4.0±0.1 2 .0±0.05 φ0.5 Absolute maximum ratings(Ta.

RB521S-30 : Features * Extremely small surface mounting type * Marking Code: "C" * For low current rectification and high speed switching applications RB521S-30 Silicon Epitaxial Planar Schottky Barrier Diode A C B DE G F Maximum Ratings (TA=25℃ unless otherwise noted) Reverse Voltage Parameter Mean Rectifying Current Peak Forward Surge Current (60Hz for Cyc.) Junction Temperature Storage Temperature Range SOD-523F INCHES MM DIM MIN MAX MIN MAX A 0.059 0.067 1.50 1.70 B 0.030 0.033 0.75 0.85 C 0.045 0.049 1.15 1.25 D 0.012 0.016 0.30 0.40 E 0.024 0.028 0.60 0.70 F 0.004 0.005 0.10 0.14 Symbol VR IO IFSM Tj Tstg Value 30 200 1 125 - 40 to + 125 Unit V mA A .

RB521S-30 : Silicon epitaxial planar. The RB521S-30 is available in SOD-523 Package. ORDERING INFORMATION FEATURES  Extremely small surface mounting type  Extremely Fast Switching Speed  Extremely Low Forward Voltage: 0.5V (max) @IF = 200mA  Low Reverse Current  Available in SOD-523 Package Package Type Part Number SOD-523 RB521S-30 Note 3,000pcs/Reel AiT provides all RoHS Compliant Products PIN DESCRIPTION APPLICATIONS  Low current rectification and high speed switching REV1.1 - AUG 2011 RELEASED, SEP 2012 UPDATED - -1- AiT Components Inc. www.ait-components.com RB521S-30 SCHOTTKY DIODES SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS TA = 25°C VR, DC reverse voltage 30V IO, M.

RB521S-30 : Schottky barrier Diodes FEATURES * Small surface mounting type * Low reverse current and low forward voltage * High reliability RB521S-30 Crownpo Technology SOD-523 + - MARKING: C OR 5M Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃ Parameter Symbol Limits DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature VR IO IFSM Tj Tstg 30 200 1 125 -40-125 Electrical Ratings @T A=25℃ Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. Unit 0.5 V 30 μA Unit V mA A ℃ ℃ Conditions IF=200mA VR=10V 10-June-2011 Document No.RB521S-30 www.crownpo.com Typical Characteristics IF, Forward Cur.

RB521S-30 : ® WON-TOP ELECTRONICS RB521S-30 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Turn-On Voltage  Fast Switching Speed  PN Junction Guard Ring for Transient and ESD Protection  For General Purpose Switching Applications  Plastic Material – UL Recognition Flammability Classification 94V-0 C Mechanical Data  Case: SOD-523, Molded Plastic  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: Cathode Band  Weight: 0.002 grams (approx.)  Marking: C  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 E A B L D G SOD-523 Dim Min Max A 1.50 1.70 B 1.10 1.30 C 0.70 0.90 D 0.30 Typical E 0.10 Typical G 0.50 0.70 L .

RB521S-30 : SMD Schottky Barrier Diodes RB521S-30 Io = 200 mA VR = 30 Volts RoHS Device Features - Low reverse current. - Low forward voltage. - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. Mechanical data - Case: SOD-523 standard package, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. - Polarity: Color band denotes cathode end. - Mounting position: Any - Weight: 0.0012 grams(approx.). SOD-523 0.008(0.20) REF 0.014(0.35) 0.010(0.25) 0.051(1.30) 0.043(1.10) 0.067(1.70) 0.059(1.50) 0.035(0.90) 0.028(0.70) 0.031(0.77) 0.020(0.50) 0.008(0.20) 0.003(0.07) Dimensions in inches and (millimeter) Circuit Diagram Maximum Ratings (a.

RB521S-30 : RB521S-30 SURFACE MOUNT SCHOTTKY DIODES FEATURES  LOW VF.  BOTH NORMAL AND Pb FREE PRODUCT ARE AVAILABLE: NORMAL:80~95%Sn,5~20%Pb Pb FREE:99% Sn ABOVE MECHANICAL DATA  CASE:SOD-523,PLASTIC  TERMINALS:SOLDERABLE PER MIL-STD-750, METHOD2026  APPROX. WEIGHT:1.695 MILLIGRAM  Pb Free:RB521S-30 Halogen Free:RB521S-30-H CASE:SOD-523 DIMENSIONS IN MILLIMETERS AND (INCHES) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED. PARAMETER SYMBOL REVERSE VOLTAGE (REPETITIVE PEAK) REVERSE VOLTAGE (DC) AVERAGE REPETITIVE FORWARD CURRENT FORWARD CURRENT SURGE PEAK(60Hz 1CYC) JUNCTION TEMPERATURE STORAGE TEMPERATURE V RRM VR IO IFSM TJ T S.

RB521S-30 : Schottky Barrier Diode FEATURES  Low VF.  Extremely small mounting type.  Small surface mounting. Pb Lead-free Production specification RB521S-30 APPLICATIONS  Low current rectification and high speed switching. SOD-523 ORDERING INFORMATION Type No. Marking RB521S-30 C Package Code SOD-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature VR IO IFSM Tj Tstg 30 200 1 125 -40 to +125 Unit V mA A ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.50.

RB521S-30 : RB521S-30 Schottky Barrier Diode FEATURES z Low VF. z Extremely small mounting type. z Small surface mounting. Pb Lead-free APPLICATIONS z Low current rectification and high speed switching. SOD-523 ORDERING INFORMATION Type No. Marking RB521S-30 C Package Code SOD-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature VR IO IFSM Tj Tstg 30 200 1 125 -40 to +125 Unit V mA A ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage Reverse current VF IR 0.50 V 30.

RB521S-30 : FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability RB521S-30 Schottky barrier Diode SOD-523 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol DC reverse voltage VR Mean rectifying current IO Peak forward surge current IFSM Power dissipation Thermal Resistance Junction to Ambient 3' 5ș-$ Junction temperature Tj Storage temperature Tstg Limit 30 200 1 150 667 125 -55~+150 Unit V mA A mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Symbol VF IR Min Typ Max Unit 0.5 V 30 μA Conditions IF=200mA VR=10V http://www.l.

RB521S-30 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# RB521S-30 Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High Reliability • Low Reverse Current and Low Forward Voltage. • Small Surface Mount Type x Marking :C • Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) Maximum Ratings Symbol VR IO IFSM TJ TSTG Rating DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current* Junction Temperature Storage Temperature Rating 30 200 1 125 -40 to +125 Unit V mA A к к 200 mA Schottky Barrier Diode 30 .

RB521S-30 : Small Signal Diode RB521S-30 200mW, Low VF SMD Schottky Barrier Diode SOD-523F B Features —Low power loss, high current capability, low VF —Surface device type mounting —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant —Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Mechanical Data —Case : SOD-523F small outline plastic package —Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed —High temperature soldering guaranteed: 260°C/10s —Polarity : Indicated by cathode band —Weight : 1.68±0.5 mg —Marking Code: C Ordering Information Part No. Packa.

RB521S-30 : Cathode Anode 2 C Top View Marking Code: "C" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60Hz for Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 200 mA Reverse Current at VR = 10 V Symbol VR IO IFSM Tj Ts Value 30 200 1 125 - 40 to + 125 Unit V mA A OC OC Symbol VF IR Max. 0.5 30 Unit V µA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 RB521S-30 SEMTECH ELECTRONICS LTD. (Subsidiary .

RB521S-30 : SMD Type Schottky barrier diode RB521S-30 Diodes Features Extremely Small surface mounting type.(EMD2) IO = 200 mA guaranteed despite the size. Low VF.(VF = 0.40 V Typ. At 200 mA) +0.050.8 -0.05 SOD-523 1.2+0.1 -0.1 + +0.050.3 -0.05 Unit: mm 0.6+0.1 -0.1 - 1.6+0.1 -0.1 0.77max +0.050.1 -0.02 0.07max Absolute Maxim um Ratings Ta = 25 P aram eter DC reverse voltage Mean rectifying current Peak forward surge current * Junction tem perature Storage temperature * 60 Hz for 1 Sym bol VR IO IFSM Tj T stg Lim its 30 200 1 150 -40 to +125 Unit V mA A Electrical Characteristics Ta = 25 Param eter Forward voltage Reverse current Sym bol VF IR C o n d itio n s IF = 200 m A VR = 10V .

RB521S-30 : BL Galaxy Electrical Schottky Barrier Diode FEATURES z Low VF. z Extremely small mounting type. z Small surface mounting. Pb Lead-free Production specification RB521S-30 APPLICATIONS z Low current rectification and high speed switching. SOD-523 ORDERING INFORMATION Type No. Marking RB521S-30 C Package Code SOD-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits DC reverse voltage VR 30 Mean rectifying current IO 200 Peak forward surge current IFSM 1 Junction temperature Tj 125 Storage temperature Tstg -40-125 Unit V mA A ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Forward voltage Reverse current Symbo.




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