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RB521S-30

JGD
Part Number RB521S-30
Manufacturer JGD
Description Silicon Epitaxial Planar Schottky Barrier Diode
Published Feb 26, 2018
Detailed Description Features * Extremely small surface mounting type * Marking Code: "C" * For low current rectification and high speed swit...
Datasheet PDF File RB521S-30 PDF File

RB521S-30
RB521S-30

Overview
Features * Extremely small surface mounting type * Marking Code: "C" * For low current rectification and high speed switching applications RB521S-30 Silicon Epitaxial Planar Schottky Barrier Diode A C B DE G F Maximum Ratings (TA=25℃ unless otherwise noted) Reverse Voltage Parameter Mean Rectifying Current Peak Forward Surge Current (60Hz for Cyc.
) Junction Temperature Storage Temperature Range SOD-523F INCHES MM DIM MIN MAX MIN MAX A 0.
059 0.
067 1.
50 1.
70 B 0.
030 0.
033 0.
75 0.
85 C 0.
045 0.
049 1.
15 1.
25 D 0.
012 0.
016 0.
30 0.
40 E 0.
024 0.
028 0.
60 0.
70 F 0.
004 0.
005 0.
10 0.
14 Symbol VR IO IFSM Tj Tstg Value 30 200 1 125 - 40 to + 125 Unit V mA A ℃ ℃ Version: 6.
1 www.
jgdsemi.
com RB521S-30 Silicon Epitaxial Planar Schottky Barrier Diode Electrical Characteristics (TA=25℃ unless otherwise noted) Forward Voltage at IF = 200 mA Reverse Current at VR = 10 V Parameter Symbol VF IR Max.
0.
5 30 Unit V µA Ratings and Characteristic...


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