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BLV97CE

NXP
Part Number BLV97CE
Manufacturer NXP
Description UHF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductor...
Datasheet PDF File BLV97CE PDF File

BLV97CE
BLV97CE

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability DESCRIPTION BLV97CE NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band.
The transistor has a 6-lead flange envelope, with a ceramic cap.
All leads are isolated from the flange.
QUICK REFERENCE DATA RF performance up to Th = 25 °C in a common e...


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