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BLV97

Part Number	BLV97
Manufacturer	NXP
Description	UHF power transistor
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product speciﬁcation March 1993 Philips Semiconductor...
Datasheet	BLV97 PDF File

Overview

...s Product speciﬁcation UHF power transistor FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability DESCRIPTION BLV97CE NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band.
The transistor has a 6-lead flange envelope, with a ceramic cap.
All leads are isolated from the flange.
QUICK REFERENCE DATA RF performance up to Th = 25 °C in a common emitter class-AB circuit.
MODE OF OPERATION c.
w.
class-AB PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL e e b c e e DESCRIPTIO...

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