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1SS184

Part Number 1SS184
Manufacturer Kexin
Title Switching Diodes
Description SMD Type Switching Diodes 1SS184 Diodes Features Small Package Low forward voltage :VF(3) = 0.9 V(Typ.) Fast Reverse Recovery Time :trr = 1.6 n...
Features Small Package Low forward voltage :VF(3) = 0.9 V(Typ.) Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) Small Total Capacitance :CT = 0.9pF(Typ.) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2...

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1SS181 : TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59  Low forward voltage : VF (3) = 0.92 V (Typ.)  Fast reverse recovery time : trr = 1.6 ns (Typ.)  Small total capacitance : CT = 2.2 pF (Typ.) Note1: For detail information, please contact our sales. 1SS181 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation PD (Note 2, 4) 200 mW PD (No.

1SS181 : ® WON-TOP ELECTRONICS 1SS181 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Dual Diode Common Anode  Fast Switching  Surface Mount Package Ideally Suited for Automatic Insertion  For General Purpose Switching Applications  Plastic Material – UL Recognition Flammability Classification 94V-0 B Mechanical Data  Case: SOT-23, Molded Plastic K  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: See Diagram  Weight: 0.008 grams (approx.)  Mounting Position: Any  Marking: A3  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 A ED H G TOP VIEW C J L M SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 .

1SS181 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching Diodes FEATURES y Low forward voltage y Fast reverse recovery time MARKING: A3 A3 A3 SOT-23 1 3 2 Solid dot = Green molding compound device,if none,the normal device. Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Symbol VRM VR IFM IO IFSM PD RθJA TJ TSTG Limit 85 80 300 100 2.0 150 833 150 -55~+150 Unit V V mA mA A mW ℃/W .

1SS181 : WILLAS SCS501V VOLTAGE 40V 0.1AMP Schottky Barrier Rectifiers Ultra High Speed Switching .006 (0.15) max. Application Pb Free Product FEATURES 1SS181 SOD-323(SC-76) * ExtremelyzLoLwoVwFforward voltage : VF (3) = 0.92V (typ.) * ExtremelyzthFinapsatcrkeavgeerse recovery time : trr = 1.6ns (typ.) .012 (0.3) Cathode Band * Low storezd cShamrgaell total capacitance : CT = 2.2pF (typ.) * Majority czarrWierecodnedcuclatioren that the material of product compliance with RoHS requirements. MECHANICAL DATA * Case:Molded plastic, JEDEC SOD-323(SC-76) Driver Marking * Terminal : Solder plated, solderable per MIL-STD-750, 1SSM18e1th=odA23026 .112 (2.85) .100 (2.55) .004 (0.1) max. .049 (1.25) m.

1SS181 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Low Forward Voltage x Low Leakage Current x Surface Mount SOT-23 Package • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Pin Configuration Top View A3 1SS181 150mW High Speed Switching Diodes 80 Volt SOT-23 A D Maximum Ratings Reverse Voltage Forward Current Surge Current (10ms) Power Dissipation @ TA=25к Storage Temperature Range Junction Temperature VR 80V IF 100mA IFSM 2.0A PD 150mW Tstg -55к to +150к Tj 150к Electrical Characteristics @ 25к Unless Otherwise Specified Minimum Reverse Breakdown .

1SS181 : only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such appli.

1SS181 : Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202, Method 208 * Polarity: See diagram * Weight: 0.008 grams SOT-23 Outline Dimensions 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 SWITCHING DIODE 100m AMPERES 80 VOLTS 3 1 2 SOT-23 Unit:mm A TOP VIEW BC E GD H K L J Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M M 0.076 0.25 WEITRON http://www.weitron.com.

1SS181 : RoHS 1SS181 SOT-23 Plastic-Encapsulate DIODE Features DPower dissipation PD : 150 mW (Tamb=25oC) TForward Current .,LIF : 100 mA Reverse Voltage VR : 80V Operating and storage junction temperature range OTj, Tstg : -55 oC to +150oC 1 1. 2.4 1.3 SOT-23 3 2 NIC CMarking:A3 2.9 1.9 0.95 0.95 0.4 Unit:mm TROELECTRICAL CHARACTERISTICS o (Ta=25 C unless otherwise specified) CParameter Symbol EReverse breakdown voltage V(BR) LReverse Voltage leakage current IR EForward Voltage Diode Capacitance WEJReverse Recovery Time VF Ctot trr Test Condition IR=100 A VR=80V IF=100mA VR=0V f=1MHz IF=IR=10mA Irr=0.1IR MIN. MAX. Unit 80 V 0.5 A 1.2 V 4 pF 4 nS WEJ ELECTRONIC CO. Http:// www.wej..

1SS181 : 1SS181 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V at VR = 80 V Total Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = 10 mA 3 12 Marking Code: A1 SOT-23 Plastic Package Symbol VRM VR IO IFM IFSM Ptot Tj T.

1SS181 : SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS181 Features Small Package Low forward voltage :VF(3) = 0.92 V(Typ.) Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) Small Total Capacitance :CT = 2.2pF(Typ.) Absolute Maximum Ratings Ta = 25 Parameter Peak Reverse Voltage DC Reverse Voltage Peak Reverse Voltage Average Rectified Current DC Forward Current Junction Temperature Storage Temperature Range * Unit Rating.Total Rating = Unit Rating 1.5. Symbol VRM VR IFM IO IF Tj Tstg Rating 85 80 300* 100* 2* 125 -55 to+ 125 Electrical Characteristics Ta = 25 Parameter Symbol Continuous reverse voltage VF Reverse current Total capacitance Reverse recovery time IR CT trr Test.

1SS181 : BL Galaxy Electrical Production specification Surface mount switching diode FEATURES z Low forward voltage VF(3)=0.92V(typ). z Fast switching. Pb Lead-free z Fast reverse recovery time:trr=1.6ns(typ) 1SS181 APPLICATIONS z High speed switching application. SOT-23 ORDERING INFORMATION Type No. Marking 1SS181 A3 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Limits Unit Non-Repetitive Peak Reverse Voltage DC Reverse Voltage Forward current(max) Forward Output current Power Dissipation Operating Junction Temperature Range Storage Temperature Range VRM VR IFM Io Pd Tj TSTG 85 80 300 100 150 125 -55 to +125 V V mA mA mW ℃ ℃ ELE.

1SS181 : Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS181 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Current IF : 100 m A Reverse Voltage VR: 80 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 SOT-23 2. 4 1. 3 Unit: mm 0. 4 Mar ki ng A3 ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR) IR VF CD t rr Test conditions IR= 100µA VR=80V IF=100mA VR=0V f=1MHz MIN MAX 80 0.5 1.2 4 4 UNIT V µA V pF nS .

1SS184 : TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package: SC-59  Low forward voltage: VF (3) = 0.90 V (typ.)  Fast reverse recovery time: trr = 1.6 ns (typ.)  Small total capacitance: CT = 0.9 pF (typ.) Note1: For detail information, please contact our sales. 1SS184 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 2, 4) 200 mW PD (Note 3) 150 Junction.

1SS184 : Certificate TH97/10561QM Certificate TW00/17276EM 1SS184 PRV : 85 Volts Io : 100 mA FEATURES : * Small package * Low forward voltage * Fast reverse recovery time * Small total capacitance * Ultra high speed switching application * Pb / RoHS Free SILICON EPITAXIAL PLANAR DIODE SOT-23 0.19 0.08 1.40 0.95 0.50 0.35 0.100 0.013 3.10 2.70 3 1 2 2.04 1.78 1.02 0.89 3 1.65 1.20 3.0 2.2 MECHANICAL DATA : * Case : SOT-23 plastic Case * Marking Code : B3 12 Dimensions in millimeters MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta =25 °C) Parameter Maximum Peak Reverse Voltage Reverse Voltage Maximum Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation J.

1SS184 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: B3 B3 B3 SOT-23 1 3 2 Solid dot = Green molding compound device,if none,the normal device. Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Symbol VRM VR IFM IO IFSM PD RθJA TJ TSTG Limit 85 80 300 100 2.0 150 833 150 -55~+150 Unit V V mA mA A mW ℃/W ℃ ℃ .

1SS184 : Production specification Surface mount switching diode FEATURES  Low forward voltage VF=0.9V(typ). Pb Lead-free  Small total capacitance.  Fast reverse recovery time:trr=1.6ns(typ). 1SS184 APPLICATIONS  High speed switching application. SOT-23 ORDERING INFORMATION Type No. Marking 1SS184 B3 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Limits Unit Non-Repetitive Peak Reverse Voltage DC Reverse Voltage Forward Current Maximum(peak) Forward Current Surge Current (10ms) Power Dissipation Operating Junction Temperature Range Storage Temperature Range VRM VR Io IFM IFSM PD Tj TSTG 85 80 100 300 2 350 150 -55 to +150 V V mA.

1SS184 : ® WON-TOP ELECTRONICS 1SS184 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Dual Diode Common Cathode  Fast Switching  Surface Mount Package Ideally Suited for Automatic Insertion  For General Purpose Switching Applications  Plastic Material – UL Recognition Flammability Classification 94V-0 B Mechanical Data  Case: SOT-23, Molded Plastic K  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: See Diagram  Weight: 0.008 grams (approx.)  Mounting Position: Any  Marking: B3  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 A ED H G TOP VIEW C J L M SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10.




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