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11N60E

Part Number	11N60E
Manufacturer	Fuji Electric
Description	FMV11N60E
Published	Mar 12, 2018
Detailed Description	FMV11N60E Super FAP-E3 series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss ...
Datasheet	11N60E PDF File

Overview

FMV11N60E Super FAP-E3 series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.
0±0.
5V) High avalanche durability Outline Drawings [mm] TO-220F(SLS) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise speciﬁed) Description Symbol VDS Drain-Source Voltage VDSX Characteristics 600 600 Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range ID IDP VGS IAR EAS EAR dV/dt -di/d...

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