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11N60S5

Infineon Technologies AG
Part Number 11N60S5
Manufacturer Infineon Technologies AG
Description SPP11N60S5
Published Jun 5, 2009
Detailed Description Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan...
Datasheet PDF File 11N60S5 PDF File

11N60S5
11N60S5

Overview
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP11N60S5 SPI11N60S5 VDS RDS(on) ID 600 V 0.
38 Ω 11 A PG-TO262 PG-TO220 2 P-TO220-3-1 23 1 Type SPP11N60S5 SPI11N60S5 Package PG-TO220 PG-TO262 Ordering Code Q67040-S4198 Q67040-S4338 Marking 11N60S5 11N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 5.
5 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature IAR VGS VGS Ptot Tj , Tstg Value 11 7 22 340 0.
6 11 ±20 ±30 125 -55.
.
.
+150 Unit A mJ A V W °C Rev.
2.
7 Page ...


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