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C2M1000170J

Part Number	C2M1000170J
Manufacturer	Cree
Description	Silicon Carbide Power MOSFET
Published	Mar 15, 2018
Detailed Description	C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • • High blockin...
Datasheet	C2M1000170J PDF File

Overview

C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • • High blocking voltage with low RDS(on) Easy to parallel and simple to drive • Low parasitic inductance • Low impedance package • Separate driver source pin • Ultra-low drain-gate capacitance • Halogen-Free, RoHS compliant • Fast intrinsic diode with low reverse recovery (Qrr) • Wide creepage (~7mm) between drain and source Beneﬁts • Higher system efﬁciency • Smooth switching waveforms • Reduced cooling requirements • Minimum gate ringing • Increased system reliability Applications • Auxiliary power supplies • Switch Mode Power Supplies • High-voltage capacitive loads Package...

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