DatasheetsPDF.com

C2M1000170J

Part Number	C2M1000170J
Manufacturer	Wolfspeed
Description	Silicon Carbide Power MOSFET
Published	Mar 4, 2024
Detailed Description	C2M1000170D 1 C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features ...
Datasheet	C2M1000170J PDF File

Overview

C2M1000170D 1 C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features TAB Drain Drain (TAB) • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Low parasitic inductance • Low impedance package • Separate driver source pin • Ultra-low Drain-gate capacitance • Halogen Free, RoHS Compliant • Fast intrinsic diode with low reverse recovery (Qrr) • Wide creepage (~7mm) between drain and source 1 2 34 5 6 7 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Wolfspeed, Inc.
is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, In...

Similar Datasheet

C2M1000170D Silicon Carbide Power MOSFET - Cree
C2M1000170D Silicon Carbide Power MOSFET - Wolfspeed
C2M1000170J Silicon Carbide Power MOSFET - Cree
C2M1000170J Silicon Carbide Power MOSFET - Wolfspeed

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)