DatasheetsPDF.com

ME2N7002F1W

Matsuki
Part Number ME2N7002F1W
Manufacturer Matsuki
Description N-Channel MOSFET
Published Mar 20, 2018
Detailed Description ME2N7002F1W/ME2N7002F1W -G N-Channel 60V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002F1W is the N-Chan...
Datasheet PDF File ME2N7002F1W PDF File

ME2N7002F1W
ME2N7002F1W

Overview
ME2N7002F1W/ME2N7002F1W -G N-Channel 60V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002F1W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION FEATURES ● RDS(ON)≦8Ω@VGS=4V ● RDS(ON)≦13Ω@VGS=2.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (SOT-323) Top View Ordering Information:ME2N7002F1W (Pb-free) ME2N7002F1W-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction and Stor...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)