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MMDT4403

Part Number	MMDT4403
Manufacturer	SeCoS
Description	PNP Silicon Multi-Chip Transistor
Published	Mar 20, 2018
Detailed Description	Elektronische Bauelemente MMDT4403 PNP Silicon Multi-Chip Transistor RoHS Compliant Product SOT-363 * Features Power...
Datasheet	MMDT4403 PDF File

Overview

Elektronische Bauelemente MMDT4403 PNP Silicon Multi-Chip Transistor RoHS Compliant Product SOT-363 * Features Power dissipation.
PCM : 0.
2 W (Temp.
=25OC) Collector current ICM : - 0.
6 A Collector -base voltage V(BR) CBO : - 40 V Operating & storage junction temperature Tj, Tstg : -55OC ~ +150OC C2 B1 E1 E2 B2 C1 Marking : K2T .
055(1.
40) .
047(1.
20) .
026TYP (0.
65TYP) .
021REF (0.
525)REF 8o 0o .
096(2.
45) .
085(2.
15) .
053(1.
35) .
045(1.
15) .
014(0.
35) .
006(0.
15) .
087(2.
20) .
079(2.
00) .
043(1.
10) .
035(0.
90) .
018(0.
46) .
010(0.
26) .
006(0.
15) .
003(0.
08) .
004(0.
10) .
000(0.
00) .
039(1.
00) .
035(0.
90) Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS˄Tamb=25ćunless otherwise specified˅ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition freq...

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