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MMDT4403

Part Number	MMDT4403
Manufacturer	MCC
Description	Dual PNP Transistors
Published	Mar 20, 2018
Detailed Description	MMDT4403 Features • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Halogen Free ...
Datasheet	MMDT4403 PDF File

Overview

MMDT4403 Features • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant.
See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 625℃/W Junction to Ambient Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Symbol VCBO VCEO VEBO IC PD Rating -40 -40 -5 -600 200 Unit V V V mA mW Marking: K2T Internal Structure 6 5 4 1 2 3 Dual PNP Plastic-Encapsulate Transistors SOT-363 G 65 4 1 23 BC A H M K L J D DIMENSIONS DIM INCHES MIN MAX MM MIN MAX A 0.
006 0.
014 0.
15 0.
35 B 0.
045 0.
053 1.
15 1.
35 C 0.
079 0.
096 2.
00 2.
45 D 0.
026 0.
65 G 0.
047 0.
055 1.
20 1.
40 H 0.
071 0.
087 1.
80 2.
20 J ----- 0.
004 ----- 0.
10 K 0.
031 0.
043 0.
80 1.
10 L 0.
010 0.
018 0.
26 0.
46 M 0.
003 0.
006 0.
08 0.
15 NOTE TYP.
Suggested Solder Pad Layout 0.
65 (mm) 1.
94 0.
80 0.
40 Rev.
3-2-09082019 1/4 MCCSEMI.
COM MMDT4403 Electrical Characteristics @ TA=25°C Unless Otherwise Specified Parameter Symbol Min Collector-Base Breakdown Voltage V(BR)CBO -40 Collector-Emitter Breakdown Voltage V(BR)CEO -40 Emitter-Base Breakdown Voltage V(BR)EBO -5 Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE(1) 30 hFE(2) 60 DC Current Gain hFE(3) 100 hFE(4) 100 hFE(5) 20 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Transition Frequency Delay Time Rise Time Storage Time Fall Time Output Capacitance VBE(sat) fT td tr ts tf Cob 200 Typ -0.
75 Max -0.
1 -0.
1 300 -0.
4 -0.
75 -0.
95 -1.
3 15 20 225 30 8.
5 Units Conditions V V V µA µA V V V V MHz ns ns ns ns pF IC=-100µA, IE=0 IC...

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