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BDX34B

Part Number	BDX34B
Manufacturer	Motorola Inc
Description	Darlington Complementary Silicon Power Transistors
Published	Mar 23, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX33B/D Darlington Complementary Silicon Power Transist...
Datasheet	BDX34B PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX33B/D Darlington Complementary Silicon Power Transistors .
.
.
designed for general purpose and low speed switching applications.
• High DC Current Gain — hFE = 2500 (typ.
) at IC = 4.
0 • Collector–Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.
) — BDX33B, 34B VCEO(sus) = 100 Vdc (min.
) — BDX33C, 34C • Low Collector–Emitter Saturation Voltage VCE(sat) = 2.
5 Vdc (max.
) at IC = 3.
0 Adc — BDX33B, 33C/34B, 34C • Monolithic Construction with Build–In Base–Emitter Shunt resistors • TO–220AB Compact Package MAXIMUM RATINGS BDX33B BDX33C* BDX34B * BDX34C *Motorola Preferred Device NPN PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ...

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