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BCX19

GME
Part Number BCX19
Manufacturer GME
Description Transistor
Published Apr 17, 2018
Detailed Description Production specification Silicon Epitaxial Planar Transistor FEATURES  High current(500mA).  Low voltage(45V). Pb L...
Datasheet PDF File BCX19 PDF File

BCX19
BCX19

Overview
Production specification Silicon Epitaxial Planar Transistor FEATURES  High current(500mA).
 Low voltage(45V).
Pb Lead-free BCX19 APPLICATIONS  General purpose amplifiers.
 Saturated switching and driver applications.
 Complement:BCX17.
ORDERING INFORMATION Type No.
Marking BCX19 U1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 500 ICM Collector Current -Peak 1 Ptot Total Power Dissipation 250 RθJA Thermal Resistance,Junction voltage 417 Tj,Tstg Junction and Storage Temperature -65 to +150 Units V V V mA A mW ℃/W ℃ C150 Rev.
B www.
gmesemi.
com 1 Production specification Silicon Epitaxial Planar Transistor BCX19 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base bre...


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