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BCX17

NXP
Part Number BCX17
Manufacturer NXP
Description PNP general purpose transistors
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCX17; BCX18 PNP general purpose transistors Product specifica...
Datasheet PDF File BCX17 PDF File

BCX17
BCX17

Overview
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCX17; BCX18 PNP general purpose transistors Product specification Supersedes data of 1997 Feb 28 1999 May 31 Philips Semiconductors Product specification PNP general purpose transistors FEATURES • High current (max.
500 mA) • Low voltage (max.
45 V).
APPLICATIONS • Saturated switching and driver applications e.
g.
for industrial service • Thick and thin-film circuits.
DESCRIPTION PNP transistor in a SOT23 plastic package.
NPN complement: BCX19.
PINNING PIN 1 2 3 base emitter collector BCX17; BCX18 DESCRIPTION handbook, halfpage 3 3 1 MARKING 2 TYPE NUMBER BCX17 BCX18 Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) T1∗ T2∗ Top view 1 2 MAM256 Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO BCX17 BCX18 VCEO collector-emitter voltage BCX17 BCX18 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 −45 −25 −5 −500 −1 −200 250 +150 150 +150 V V V mA A mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −50 −30 V V MIN.
MAX.
UNIT 1999 May 31 2 Philips Semiconductors Product specification PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −20 V IE = 0; VCB = −20 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −100 mA; VCE = −1 V IC = −300 mA; VCE = −1 V IC = −500 mA; VCE = −1 V VCEsat VBE Cc fT Note 1.
VBE decreases by approximatel...


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