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BCX12

Siemens Semiconductor Group
Part Number BCX12
Manufacturer Siemens Semiconductor Group
Description NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage)
Published Mar 23, 2005
Detailed Description NPN Silicon AF Switching Transistor For general AF applications q High breakdown voltage q Low collector-emitter saturat...
Datasheet PDF File BCX12 PDF File

BCX12
BCX12

Overview
NPN Silicon AF Switching Transistor For general AF applications q High breakdown voltage q Low collector-emitter saturation voltage q Complementary type: BCX 13 (PNP) q 2 BCX 12 3 1 Type BCX 12 Marking BCX 12 Ordering Code Q62702-C25 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 125 125 5 800 1 100 200 625 150 – 65 … + 150 Unit V mA A mA mW ˚C 200 135 K/W 1) 2) For detailed information see chapter Package Outlines.
Mounted on Al heat sink 15 mm × 25 mm × 0.
5 mm.
Semiconductor Group 1 5.
91 BCX 12 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 100 V, IE = 0 VCB = 100 V, IE = 0, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain1) IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage1) IC = 500 mA, IB = 50 mA AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz fT Cobo – – 100 10 – – MHz pF V(BR)CE0 V(BR)CB0 V(BR)EBS ICB0 – – IEB0 hFE 25 50 63 40 VCEsat VBEsat – – – – – – – – – – – – 1.
0 1.
6 V – – – – 100 10 100 nA µA nA – 125 125 5 – – – – – – V Values typ.
max.
Unit 1) Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group 2 BCX 12 Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp) Colle...


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