DatasheetsPDF.com

BF1009S

Siemens Semiconductor Group
Part Number BF1009S
Manufacturer Siemens Semiconductor Group
Description Silicon N-Channel MOSFET Tetrode
Published Mar 23, 2005
Detailed Description BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating volt...
Datasheet PDF File BF1009S PDF File

BF1009S
BF1009S

Overview
BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1628 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1009S JLs Maximum Ratings Parameter Drain-source voltage Symbol Value 12 25 10 3 200 -55 .
.
.
+150 150 Unit V mA V mW °C VDS ID ±I G1/2SM +VG1SE Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature Ptot T stg T ch Thermal Resistance Channel - soldering point Rthchs ≤370 K/W Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -25-1998 BF 1009S Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol Values Parameter min.
DC characteri...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)