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BF1009S

Infineon Technologies AG
Part Number BF1009S
Manufacturer Infineon Technologies AG
Description Silicon N-Channel MOSFET Tetrode
Published Mar 23, 2005
Detailed Description BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating vo...
Datasheet PDF File BF1009S PDF File

BF1009S
BF1009S

Overview
BF1009S.
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Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009S BF1009SR Maximum Ratings Parameter Package SOT143 SOT143R 1=S 1=D 2=D 2=S Pin Configuration 3=G2 3=G1 4=G1 4=G2 Value 12 25 10 3 200 200 Tstg Tch -55 .
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150 150 Marking JLs JLs Unit V mA V mW Symbol VDS ID ±IG1/2SM +VG1SE Ptot Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF1009S, BF1009SR TS ≤ 9...


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