DatasheetsPDF.com

BF1100WR

NXP
Part Number BF1100WR
Manufacturer NXP
Description Dual-gate MOS-FET
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification File under Discrete Semiconductors,...
Datasheet PDF File BF1100WR PDF File

BF1100WR
BF1100WR

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FET FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC.
APPLICATIONS • VHF and UHF applications such as television tuners and professional communications equipment.
DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package.
The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static discharge during tra...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)