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BF1100R

NXP
Part Number BF1100R
Manufacturer NXP
Description Dual-gate MOS-FETs
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product specification File under Discrete Semicon...
Datasheet PDF File BF1100R PDF File

BF1100R
BF1100R

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FETs FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC.
APPLICATIONS • VHF and UHF applications such as television tuners and professional communications equipment.
DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.
The transistor consists of an amplifier MOS-FET with source BF1100; BF1100R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected...


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