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BF1101WR

NXP
Part Number BF1101WR
Manufacturer NXP
Description N-channel dual-gate MOS-FETs
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Superse...
Datasheet PDF File BF1101WR PDF File

BF1101WR
BF1101WR

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment.
handbook, 2 columns 4 BF1101; BF1101R; BF1101WR PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1101R marking code: NCp.
Fig.
2 Simplified outline (SOT143R).
3 fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.
Integrated diodes between gates and source protect against excessive input voltage surges.
The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
1 Top view 2 MSB014 2 Top view 1 MSB842 BF1101 marking code: NDp.
BF1101WR marking code: NC.
Fig.
1 Simplified outline (SOT143B).
Fig.
3 Simplified outline (SOT343R).
QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 May 14 2 f = 1 MHz f = 800 MHz input level for k = 1% at 40 dB AGC CONDITIONS − − − 25 − − − 100 − MIN.
− − − 30...


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