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BF1101

NXP
Part Number BF1101
Manufacturer NXP
Description N-channel dual-gate MOS-FETs
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Superse...
Datasheet PDF File BF1101 PDF File

BF1101
BF1101

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment.
handbook, 2 columns 4 BF1101; BF1101R; BF1101WR PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1101R marking code: NCp.
Fig.
2 Simplified outline (SOT143R).
3 fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.
Integrated d...


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