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BLS7G3135LS-200

Ampleon
Part Number BLS7G3135LS-200
Manufacturer Ampleon
Description LDMOS S-band radar power transistor
Published Apr 26, 2018
Detailed Description BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1...
Datasheet PDF File BLS7G3135LS-200 PDF File

BLS7G3135LS-200
BLS7G3135LS-200

Overview
BLS7G3135LS-200 LDMOS S-band radar power transistor Rev.
3 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Test signal f (GHz) VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns) pulsed RF 3.
1 32 200 12 48 8 6 3.
3 32 200 12 46 8 6 3.
5 32 200 12 43 8 6 1.
2 Features and benefits  High efficiency  Excellent ruggedness  Designed for broadband operation  Excellent thermal stability  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Internally matched for ease of use (input and output)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications  S-band rada...


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