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BLS7G3135LS-200

NXP
Part Number BLS7G3135LS-200
Manufacturer NXP
Description LDMOS S-band radar power transistor
Published Mar 7, 2016
Detailed Description BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 2 — 23 September 2013 Product data sheet 1. Product profile ...
Datasheet PDF File BLS7G3135LS-200 PDF File

BLS7G3135LS-200
BLS7G3135LS-200

Overview
BLS7G3135LS-200 LDMOS S-band radar power transistor Rev.
2 — 23 September 2013 Product data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Test signal f (GHz) VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns) pulsed RF 3.
1 32 200 12 48 8 6 3.
3 32 200 12 46 8 6 3.
5 32 200 12 43 8 6 1.
2 Features and benefits  High efficiency  Excellent ruggedness  Designed for broadband operation  Excellent thermal stability  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Internally matched for ease of use (input and output)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications  S-band radar applications in the frequency range 3100 MHz to 3500 MHz NXP Semiconductors BLS7G3135LS-200 LDMOS S-band radar power transistor 2.
Pinning information Table 2.
Pin 1 2 3 Pinning Description drain gate source [1] Connected to flange.
3.
Ordering information Simplified outline Graphic symbol   [1]   V\P Table 3.
Ordering information Type number Package Name Description BLS7G3135LS-200 - earless flanged ceramic package; 2 leads Version SOT502B 4.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature 0.
5 65 [1] - [1] Continuous use at maximum temperature will affect the reliability.
Max 65 +13 +150 225 Unit V V C C 5.
Thermal characteristics Table 5.
Thermal characteristics Symbol Parameter Zth(j-mb) transient thermal impedance from junction to mounting base Conditions Tcase = 85 C; PL = 200 W tp = 100 s; ...


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