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BF517

Siemens Semiconductor Group
Part Number BF517
Manufacturer Siemens Semiconductor Group
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type BF 517 Marking Orderin...
Datasheet PDF File BF517 PDF File

BF517
BF517

Overview
BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type BF 517 Marking Ordering Code LRs Q62702-F42 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings of any single Transistor Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Symbol Values 15 20 2.
5 25 50 mA Unit V VCEO VCBO VEBO IC ICM Ptot f ≥ 10 MHz Total power dissipation mW 280 150 - 65 + 150 - 65 .
.
.
+ 150 ≤ 340 °C TS ≤ 55 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Tj TA Tstg RthJS K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm Semiconductor Group 1 Aug-02-1996 BF 517 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 15 0.
1 - V nA 50 25 250 V 0.
5 IC = 1 mA, IB = 0 Collector-base cutoff current ICBO hFE VCEsat VCB = 15 V, IE = 0 DC current gain IC = 5 mA, VCE = 10 V Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA AC Characteristics of any single Transistor Transition frequency fT 1 2 0.
55 0.
25 1.
45 0.
8 - GHz pF 0.
3 0.
75 0.
4 dB 2.
5 - IC = 5 mA, VCE = 10 V, f = 200 MHz Collector-base capacitance Ccb Cce - VCB = 5 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Input capacitance Cibo - VEB = 0.
5 V, IC = ic = 0 , f = 1 MHz Output capacitance Cobs - VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Noise figure F IC = 5 mA, VCE = 10 V, f = 100 MHz ZS = 75 Ω Semiconductor Group 2 Aug-02-1996 BF 517 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 3 K/W - RthJS 10 2 P totmax/PtotDC 10 2 D=0 0.
005 0.
01 0.
02 0.
05 ...


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