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BF569

Siemens Semiconductor Group
Part Number BF569
Manufacturer Siemens Semiconductor Group
Description PNP Silicon RF Transistor
Published Mar 23, 2005
Detailed Description PNP Silicon RF Transistor q BF 569 For oscillators, mixers and self-oscillating mixer stages in UHF TV tuners Type BF...
Datasheet PDF File BF569 PDF File

BF569
BF569

Overview
PNP Silicon RF Transistor q BF 569 For oscillators, mixers and self-oscillating mixer stages in UHF TV tuners Type BF 569 Marking LHs Ordering Code (tape and reel) Q62702-F869 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA ≤ 25 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA ≤ Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Values 35 40 3 30 5 280 150 – 55 … + 150 Unit V mA mW ˚C 450 K/W 1) 2) For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.
7 mm × 0.
7 mm.
Semiconductor Group 1 07.
94 BF 569 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 3 mA, VCE = 10 V AC Characteristics Transition frequency IC = 3 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Noise figure IC = 3 mA, VCB = 10 V, f = 800 MHz RS = 60 Ω Common base power gain IC = 3 mA, VCB = 10 V, f = 800 MHz RL = 500 Ω fT Ccb Cce F – – – – 950 0.
32 0.
15 4.
5 – – – – dB MHz pF V(BR) CE0 ICB0 hFE 35 – 20 – – 50 – 100 – V nA – Values typ.
max.
Unit Gp – 14.
8 – Semiconductor Group 2 BF 569 Total power dissipation Ptot = f (TA) Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb = f (VCB) f = 1 MHz Semiconductor Group 3 ...


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