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BF989

NXP
Part Number BF989
Manufacturer NXP
Description N-channel dual-gate MOS-FET
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semicond...
Datasheet PDF File BF989 PDF File

BF989
BF989

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
APPLICATIONS • UHF applications such as: – UHF television tuners – Professional communication equipment.
PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 Top view Marking code: MAp.
MAM039 handbook, halfpage BF989 DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.
4 3 g2 g1 d DESCRIPTION 1 2 s,b Fig.
1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig1-s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f ...


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