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BF997

Siemens Semiconductor Group
Part Number BF997
Manufacturer Siemens Semiconductor Group
Description Silicon N Channel MOSFET Tetrode
Published Mar 23, 2005
Detailed Description Silicon N Channel MOSFET Tetrode q q BF 997 Integrated suppression network against spurious VHF oscillations For VHF a...
Datasheet PDF File BF997 PDF File

BF997
BF997

Overview
Silicon N Channel MOSFET Tetrode q q BF 997 Integrated suppression network against spurious VHF oscillations For VHF applications, especially in TV tuners with extended VHF band, e.
g.
in CATV tuners Type BF 997 Marking MK Ordering Code (tape and reel) Q62702-F1055 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID ± Values 20 30 10 200 150 Unit V mA mW IG1/2SM Ptot Tstg Tch – 55 … + 150 ˚C 1) For detailed information see chapter Package Outlines.
.
Semiconductor Group 1 07.
94 BF 997 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VG1S = – VG2S = 4 V Gate 1 source breakdown voltage ± IG1S = 10 mA, VG2S = VDS ...


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