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BF998

NXP
Part Number BF998
Manufacturer NXP
Description Silicon N-channel dual-gate MOS-FETs
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes ...
Datasheet PDF File BF998 PDF File

BF998
BF998


Overview
DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Silicon N-channel dual-gate MOS-FETs Product specification BF998; BF998R FEATURES  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS  VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.
DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected.
The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static discharge during transport or handling.
handbook, halfpage 4 3 d g2 g1 1 Top view 2 MAM039 s,b Marking code: MOp.
Fig.
1 Simplified outline (SOT143B) and symbol; BF998.
handbook, halfpag3e 4 d g2 g1 PINNING PIN 1 2 3 4 SYMBOL DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1 QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot yfs Cig1-s Crs F drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure Tj operating junction temperature 2 Top view 1 MAM040 s,b Marking code: MOp.
Fig.
2 Simplified outline (SOT143R) and symbol; BF998R.
CONDITIONS f = 1 MHz f = 800 MHz TYP.
   24 2.
1 25 1  MAX.
12 30 200     150 UNIT V mA mW mS pF fF dB C 1996 Aug 01 2 NXP Semiconductors Silicon N-channel dual-gate MOS-FETs Product specification BF998; BF998R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS ID IG1 IG2 Ptot Ptot Tstg Tj PARAMETER CONDITIONS MIN.
drain-source voltage  drain ...


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