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BF998

Vishay Telefunken
Part Number BF998
Manufacturer Vishay Telefunken
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode
Published Mar 23, 2005
Detailed Description BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensit...
Datasheet PDF File BF998 PDF File

BF998
BF998

Overview
BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device.
Observe precautions for handling.
Applications Input and mixer stages in UHF tuners.
Features D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 BF998R Marking: MOR Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 1 2 13 654 13 566 4 3 BF998RW Marking: WMO Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Document Number 85011 Rev.
4, 23-Jun-99 www.
vishay.
de • FaxBack +1-408-970-5600 1 (9) BF998/BF998R/BF998RW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 12 ID 30 ±IG1/G2SM 10 ±VG1S/G2S 7 Ptot 200 TCh 150 Tstg –65 to +150 Unit V mA mA V mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.
5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, –VG1S = –VG2S = 4 V ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 ±VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = 8 V, VG1S = 0, VG2S = 4 V Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS B...


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